Product Description
This 5.8GHz bidirectional signal amplifier delivers 5W (37dBm) output power with 17±1dB Tx/Rx gain, low noise figure ≤2.5dB and <1μs delay. N-Type female connectors, 6–16V wide voltage input, Ideal for 5GHz wireless coverage extension, industrial private networks, surveillance backhaul and emergency communication.
Selling Points
Superior GaN Chip Construction : GaN chips adopt ceramic packaging, different from plasticpackaged chips widely available on the market. ·
Premium PCB Manufacturing : Adopts highfrequency board with large area goldplating process, unlike ordinary boards with tinplating process on the market, enabling longterm stable operation under highpower conditions.
Technical Specification
|
Parameter |
Value |
|
Product Category |
Bidirectional Signal Amplification Module |
|
Input Power |
3-20dBm |
|
EVM |
3%@28dBm 802.11g 54Mbps OFDM 64QAM BW 20MHz |
|
Transmit Gain |
17±1dB |
|
Tx/Rx Delay |
<1μs |
|
Power Supply |
5.5*2.1mm Interface 6-16V |
|
Operating Temperature |
-30~70°C |
|
Product Dimensions |
98*66*28mm |
|
Operating Frequency |
5725-5850MHz |
|
Output Power |
5W (37dBm) |
|
Noise Figure |
≤2.5dB |
|
Receive Gain |
17±1dB |
|
Connector Type |
To AP: N-Female; To ANT: N-Male |
|
LED Indicator |
Transmit: Green; Receive: Red |
|
Storage Temperature |
-40~150°C |
|
Product Weight |
0.3kg |