Product Description
10W 100–200MHz GaN Amplifier
This unidirectional GaN signal amplifier module delivers high-performance RF signal amplification for 100–200MHz low frequency band.
It features high output power up to 40dBm, power efficiency up to 40%, and maximum gain of 40dB with outstanding flatness and superior reliability.
Powered by 24V DC, the module draws 1.5A operating current. Both input and output ports adopt SMA-Female RF connectors, equipped with a 20cm red/black power cable.
Built with an aluminum compact housing, dimension: 96×53×17mm, net weight: 0.15kg.
Selling Points
Superior GaN Chip Construction : GaN chips adopt ceramic packaging, different from plasticpackaged chips widely available on the market. ·
Premium PCB Manufacturing : Adopts highfrequency board with largearea goldplating process, unlike ordinary boards with tinplating process on the market, enabling longterm stable operation under highpower conditions.
Technical Specification
|
Parameter |
Value |
|
Frequency Range |
100-200MHz |
|
Operating Voltage |
24V DC |
|
Gain S21 |
40dB ± 1 |
|
Input Return Loss(S11) |
≤15dB |
|
Flatness |
±0.5dB |
|
Output Power |
10W/40dBm |
|
Current |
1.5A@24V |
|
Efficiency |
40%@40dBm |
|
LED State |
Red |
|
Operating Temperature |
-30 B22℃ ~ +85 ℃ |
|
Storage Temperature |
-40 ℃ ~ +150 ℃ |
|
Operating Humidity |
<95%RH |
|
RF Connector |
Input/Output: SMAFemale |
|
Power Socket |
20 cm Red/Black Wire |
|
Shell Material |
Aluminum |
|
Dimension |
96*53*17mm |
|
Net Weight |
0.15kg |